ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,679, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure with ni... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,680, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,681, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor structure and fabricating met... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,682, issued on June 23, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Vertical transport transistor devices with b... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,683, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with reduc... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,684, issued on June 23, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and method ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,685, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Triple layer high-k gate dielectric... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,686, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor structure with flush shallow ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,687, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with gate e... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,688, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.). "Low resistance metal to semiconductor contacts for integrated N... Read More